advanced power p-channel enhancement mode electronics corp. power mosfet low gate charge bv dss -30v simple drive requirement r ds(on) 50m fast switching i d - 20a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance , junction-case 10 /w rthj-a maximum thermal resistance , junction-ambient 110 /w data and specifications subject to change without notice 2010 17 07 5 -1/4 ap9435GH/j rating - 30 20 - 20 0.1 parameter drain-source voltage gate-source voltage continuous drain current linear derating factor storage temperature range continuous drain current -13 pulsed drain current 1 -60 rohs-compliant product thermal data parameter total power dissipation 12.5 -55 to 150 operating junction temperature range -55 to 150 advanced power mosfets utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device. the to-252/to-251 package is wid e ly used for commercial-industrial application. g d s g d s to-252(h) g d s to-251(j) http://
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-10a - - 50 m v gs =-4.5v, i d =-5a - - 90 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-10a - 10 - s i dss drain-source leakage current (t j =25 o c) v ds =-30v, v gs =0v - - -1 ua drain-source leakage current (t j =150 o c) v ds =-24v, v gs =0v - - -25 ua i gss gate-source leakage v gs = 20v - - 100 na q g total gate charge 2 i d =-10a - 8 16 nc q gs gate-source charge v ds =-24v - 1.6 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 4.3 - nc t d(on) turn-on delay time 2 v ds =-15v - 6.3 - ns t r rise time i d =-10a - 46 - ns t d(off) turn-off delay time r g =3.3 , v gs =-10v - 20 - ns t f fall time r d =1.5 - 7.4 - ns c iss input capacitance v gs =0v - 570 740 pf c oss output capacitance v ds =-25v - 80 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-10a, v gs =0v - - -1.3 v t rr reverse recovery time 2 i s =-10a, v gs =0v, - 18 - ns q rr reverse recovery charge di/dt=-100a/s - 10 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. 2/4 ap9435GH/j this product has been qualified for consumer market. applications or uses as criterial component in life support
ap9435GH/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 0 20 40 60 80 02 46 8 10 -v ds , drain-to-source voltage (v) -i d , dr ai n c u r r e nt (a ) t c =25 o c v g =-4.0v -4.5v -10v -8.0v -6.0v 0 10 20 30 40 50 60 70 02468 -v ds , drain-to-source voltage (v) -i d , dr ai n c u r r e nt (a ) t c =150 o c v g =-4.0v -4.5v -6.0v -10v -8.0v 1 1.2 1.4 1.6 1.8 2 -50 0 50 100 150 t j , junction temperature ( o c) -v gs( th) (v ) 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a ) t j =25 o c t j =150 o c 30 40 50 60 70 80 90 2468 1 0 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-10a t c =25 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 5 0 100 150 t j , junction temperature ( o c) n ormalize d r ds(on) i d =-10a v g =-10v
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 ap9435GH/j t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 10 100 1000 1 5 9 1 31 7 2 12 5 2 9 -v ds , drain-to-source voltage (v) c ( p f) f =1.0mh z ciss coss crss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) n o rmalize d t h e r mal re spon se ( r th jc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) 100us 1ms 10ms 100ms dc t c =25 o c single pulse 0 2 4 6 8 10 12 0 4 8 12 16 20 q g , total gate charge (nc) -v gs , g a te to s o u rc e voltage ( v ) i d =-10a v ds =-24v
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 e3 f 2.20 2.63 3.05 f1 0.5 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 symbols advanced power electronics corp. e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 9435 gh ywwsss date code ( ywwsss ) y last digit of the year ww week sss sequence logo meet rohs requirement
min nom max original original original a 2.10 2.30 2.50 a1 0.60 1.20 1.80 b1 0.40 0.60 0.80 b2 0.60 0.95 1.25 c 0.40 0.50 0.65 c1 0.40 0.55 0.70 d 6.00 6.50 7.00 d1 4.80 5.40 5.90 e1 5.00 5.50 6.00 e2 1.20 1.70 2.20 e ---- 2.30 ---- f 7.00 --- 16.70 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-251 advanced power electronics corp. millimeters symbols 9435 g j ywwsss part numbe r package code a c1 a1 c e d e2 e1 e b1 b2 f d1 e date code ( ywwsss ) y last digit of the year ww week ss s sequence logo meet rohs requirement
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